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| 1N4148 / 1N4448 FAST SWITCHING DIODE Features * * * Fast Switching Speed General Purpose Rectification Silicon Epitaxial Planar Construction A B A Mechanical Data * * * * * Case: DO-35 Leads: Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Marking: Type Number Weight: 0.13 grams (approx.) DO-35 Dim A B C D Min 25.40 3/4 3/4 3/4 D C Max 3/4 4.00 0.60 2.00 All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t = 1.0s @ t = 1.0ms Power Dissipation (Note 1) Derate Above 25C Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RqJA Tj , TSTG 300 150 1.0 2.0 500 1.68 300 -65 to +175 1N4148 100 75 53 500 1N4448 Unit V V V mA mA A mW mW/C K/W C Electrical Characteristics Characteristic Maximum Forward Voltage @ TA = 25C unless otherwise specified Symbol 1N4148 1N4448 1N4448 VFM Min 3/4 0.62 3/4 3/4 3/4 3/4 Max 1.0 0.72 1.0 5.0 50 30 25 4.0 4.0 Unit V mA mA mA nA pF ns Test Condition IF = 10mA IF = 5.0mA IF = 100mA VR = 75V VR = 70V, Tj = 150C VR = 20V, Tj = 150C VR = 20V VR = 0, f = 1.0MHz IF = 10mA to IR =1.0mA VR = 6.0V, RL = 100W Maximum Peak Reverse Current Capacitance Reverse Recovery Time IRM Cj trr Notes: 1. Valid provided that device terminals are kept at ambient temperature. DS12019 Rev. B-2 1 of 2 1N4148 / 1N4448 IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 10,000 100 IR, LEAKAGE CURRENT (nA) 1000 10 100 1.0 10 0.1 VR = 20V 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 1 0 100 200 Tj, JUNCTION TEMPERATURE (C) Fig. 2, Leakage Current vs Junction Temperature DS12019 Rev. B-2 2 of 2 1N4148 / 1N4448 |
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